Indium-doped molybdenum oxide as a new p-type transparent conductive oxide

被引：51

作者：

Chen, Han-Yi ^{[1
]}

Su, Huan-Chieh ^{[2
]}

Chen, Chia-Hsiang ^{[2
]}

Liu, Kuo-Liang ^{[2
]}

Tsai, Chung-Min ^{[2
]}

Yen, Shiang-Jie ^{[2
]}

Yew, Tri-Rung ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Inst NanoEngn & MicroSyst, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 15期

关键词：

THIN-FILMS; SEMICONDUCTOR; GROWTH;

D O I：

10.1039/c0jm03815f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

New p-type transparent conductive oxide materials, MoO3: In single crystal nanowires and amorphous films, are synthesized in this work. Both nanowires and amorphous films exhibit high optical transmittance, 80-88% for 80 nm thick films at 400-800 nm wavelength, and low resistivity (down to 5.98 x 10(-4) U cm) suitable for photovoltaic device applications. The amorphous films are also deposited on flexible polyimide substrates and exhibit excellent electrical properties even after bending. Besides, p-MoO3:In/i-ZnO/n-AZO devices are fabricated to demonstrate the potential for all-transparent flexible electronic applications.

引用

页码：5745 / 5752

页数：8

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