Tungsten nanocrystal memory devices improved by supercritical fluid treatment

A supercritical CO2 (SCCO2) fluid technique is proposed to improve electrical characteristics for W nanocrystal nonvolatile memory devices, since the thickness and quality of tunnel oxide are critical issues for the fabrication of nonvolatile memory devices. After SCCO2 treatments, C-V curves are restored to normal, as well as the leakage current of W nanocrystal memory devices are reduced significantly. It reveals that W nanocrystal memory devices could be formed with shorter oxidation time, moreover, dangling bonds and trapping states initially created within an incomplete oxidized film will be efficiently repaired after SCCO2 treatment. (c) 2007 American Institute of Physics.