N-doped GeTe as Performance Booster for Embedded Phase-Change Memories

被引：63

作者：

Fantini, A. ^{[1
]}

Sousa, V. ^{[1
]}

Perniola, L. ^{[1
]}

Gourvest, E. ^{[1
,2
,3
]}

Bastien, J. C. ^{[1
]}

Maitrejean, S. ^{[1
]}

Braga, S. ^{[4
]}

Pashkov, N. ^{[1
]}

Bastard, A. ^{[1
,2
]}

Hyot, B. ^{[1
]}

Roule, A. ^{[1
]}

Persico, A. ^{[1
]}

Feldis, H. ^{[1
]}

Jahan, C. ^{[1
]}

Nodin, J. F. ^{[1
]}

Blachier, D. ^{[1
]}

Toffoli, A. ^{[1
]}

Reimbold, G. ^{[1
]}

Fillot, F. ^{[1
]}

Pierre, F. ^{[1
]}

Annunziata, R.

Benshael, D. ^{[2
]}

Mazoyer, P. ^{[2
]}

Vallee, C. ^{[3
]}

Billon, T. ^{[1
]}

Hazart, J. ^{[1
]}

De Salvo, B. ^{[1
]}

Boulanger, F. ^{[1
]}

机构：

[1] MINATEC, CEA LETI, 17 Rue Martyrs, F-38054 Grenoble, France

[2] STMicroelectron, Geneva, Switzerland

[3] MINATEC, LTM CNRS, Grenoble, France

[4] Univ Pavia, Dipartimento Elettronica, I-27100 Pavia, Italy

来源：

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年

关键词：

D O I：

10.1109/IEDM.2010.5703441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability, ... ), data retention is assured up to 85 degrees C, still limited for the automotive market segment. Alternative active material able to comply with the stringent requirements of automotive applications should possibly exhibit higher crystallization temperature (T-C) as well as higher Activation Energy (E-A) with respect to GST. Recent literature shows that GeTe provides better retention [1-3], while several works put in evidence how data retention is enhanced by inclusions in pure host alloys [4-6].

引用

页数：4

共 11 条

[1] An Integrated Multi-Physics Approach to the Modeling of a Phase-Change Memory Device [J].

Braga, Stefania ;

Cabrini, Alessandro ;

Torelli, Guido .

ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, :154-157

[2] Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention [J].

Czubatyj, Wally ;

Hudgens, Stephen J. ;

Dennison, Charles ;

Schell, Carl ;

Lowrey, Tyler .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :869-871

[3] Comparative assessment of GST and GeTe Materials For Application to Embedded Phase-Change Memory Devices [J].

Fantini, A. ;

Perniola, L. ;

Armand, M. ;

Nodin, J. F. ;

Sousa, V. ;

Persico, A. ;

Cluzel, J. ;

Jahan, C. ;

Maitrejean, S. ;

Lhostis, S. ;

Roule, A. ;

Dressler, C. ;

Reimbold, G. ;

DeSalvo, B. ;

Mazoyer, P. ;

Bensahel, D. ;

Boulanger, F. .

2009 IEEE INTERNATIONAL MEMORY WORKSHOP, 2009, :66-+

[4] Evidence of Germanium precipitation in phase-change Ge1-xTex thin films by Raman scattering [J].

Gourvest, E. ;

Lhostis, S. ;

Kreisel, J. ;

Armand, M. ;

Maitrejean, S. ;

Roule, A. ;

Vallee, C. .

APPLIED PHYSICS LETTERS, 2009, 95 (03)

[5]

Horii H., 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), P177, DOI 10.1109/VLSIT.2003.1221143

[6]

Kim, 2006, APPL PHYS LETT, V89

[7] Dependence of activity and stability of germanium nitride powder for photocatalytic overall water splitting on structural properties [J].

Maeda, Kazuhiko ;

Saito, Nobuo ;

Inoue, Yasunobu ;

Domen, Kazunari .

CHEMISTRY OF MATERIALS, 2007, 19 (16) :4092-4097

[8] Doped In-Ge-Te phase change memory featuring stable operation and good data retention [J].

Morikawa, T. ;

Kurotsuchi, K. ;

Kinoshita, M. ;

Matsuzaki, N. ;

Matsui, Y. ;

Fujisaki, Y. ;

Hanzawa, S. ;

Kotabe, A. ;

Terao, M. ;

Moriya, H. ;

Iwasaki, T. ;

Matsuoka, M. ;

Nitta, F. ;

Moniwa, M. ;

Koga, T. ;

Takaura, N. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :307-+

[9] Electrical Behavior of Phase-Change Memory Cells Based on GeTe [J].

Perniola, Luca ;

Sousa, Veronique ;

Fantini, Andrea ;

Arbaoui, Edrisse ;

Bastard, Audrey ;

Armand, Marilyn ;

Fargeix, Alain ;

Jahan, Carine ;

Nodin, Jean-Francois ;

Persico, Alain ;

Blachier, Denis ;

Toffoli, Alain ;

Loubriat, Sebastien ;

Gourvest, Emanuel ;

Beneventi, Giovanni Betti ;

Feldis, Helene ;

Maitrejean, Sylvain ;

Lhostis, Sandrine ;

Roule, Anne ;

Cueto, Olga ;

Reimbold, Gilles ;

Poupinet, Ludovic ;

Billon, Thierry ;

De Salvo, Barbara ;

Bensahel, Daniel ;

Mazoyer, Pascale ;

Annunziata, Roberto ;

Zuliani, Paola ;

Boulanger, Fabien .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) :488-490

[10]

Raoux S, 2009, P EUR PHAS CHANG OV, P91, DOI DOI 10.1557/PROC-1160-H14-07

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