Transparent ZnO-TFT Arrays fabricated by atomic layer deposition

被引：98

作者：

Park, Sang-Hee Ko ^{[1
]}

Hwang, Chi-Sun

Jeong, Hu Young

Chu, Hye Yong

Cho, Kyoung Ik

机构：

[1] Elect & Telecommun Res Inst, Taejon 305350, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 01期

关键词：

D O I：

10.1149/1.2801017

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Transparent ZnO thin film transistor (TFT) array of 176 x 144 (106 dpi) was fabricated on glass substrate. The V-th of the TFT with inverted coplanar structure is about 0.8 V and the mobility is 1.13 cm(2)/V s. The active layer (ZnO), gate insulator (Al2O3), and source-drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source-drain electrode. (C) 2007 The Electrochemical Society.

引用

页码：H10 / H14

页数：5

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