Improved Resistive Switching Properties of Solution Processed TiO2 Thin Films

被引：9

作者：

Biju, Kuyyadi P. ^{[1
]}

Liu, Xinjun ^{[2
]}

Bourim, El Mostafa ^{[1
]}

Kim, Insung ^{[2
]}

Jung, Seungjae ^{[2
]}

Park, Jubong ^{[2
]}

Hwang, Hyunsang ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

BIPOLAR; UNIPOLAR; MECHANISM;

D O I：

10.1149/1.3494433

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Resistive switching characteristics of low temperature sol-gel processed (250 degrees C) TiO2 thin films are investigated. The Pt/TiO2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability and stability of the device is significantly improved by choosing a proper compliance current in the first set operation. The film shows excellent switching properties such as high on/off ratio (> 20), good cycling endurance, and long retention (> 10(4) s) at 85 degrees C. The enhanced switching properties are explained by a physical model based on localized generation/recovery of oxygen vacancy defects near the bottom electrode interface. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3494433] All rights reserved.

引用

页码：H443 / H446

页数：4

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