Bipolar resistive switching in amorphous titanium oxide thin film

被引：56

作者：

Jeong, Hu Young ^{[2
]}

Lee, Jeong Yong ^{[2
]}

Ryu, Min-Ki ^{[1
]}

Choi, Sung-Yool ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Taejon 305700, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 1-2期

关键词：

D O I：

10.1002/pssr.200903383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for the carrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO2 Fermi energy level (E-f) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：28 / 30

页数：3

共 13 条

[1] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].

ARGALL, F .

SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&

[2] Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films [J].

Jeong, Hu Young ;

Lee, Jeong Yong ;

Choi, Sung-Yool ;

Kim, Jeong Won .

APPLIED PHYSICS LETTERS, 2009, 95 (16)

[3] A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories [J].

Lee, Myoung-Jae ;

Seo, Sunae ;

Kim, Dong-Chirl ;

Ahn, Seung-Eon ;

Seo, David H. ;

Yoo, In-Kyeong ;

Baek, In-Gyu ;

Kim, Dong-Sik ;

Byun, Ik-Su ;

Kim, Soo-Hong ;

Hwang, In-Rok ;

Kim, Jin-Soo ;

Jeon, Sang-Ho ;

Park, Bae Ho .

ADVANCED MATERIALS, 2007, 19 (01) :73-+

[4] Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory [J].

Lee, Myoung-Jae ;

Han, Seungwu ;

Jeon, Sang Ho ;

Park, Bae Ho ;

Kang, Bo Soo ;

Ahn, Seung-Eon ;

Kim, Ki Hwan ;

Lee, Chang Bum ;

Kim, Chang Jung ;

Yoo, In-Kyeong ;

Seo, David H. ;

Li, Xiang-Shu ;

Park, Jong-Bong ;

Lee, Jung-Hyun ;

Park, Youngsoo .

NANO LETTERS, 2009, 9 (04) :1476-1481

[5] Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes [J].

Li, Song-Lin ;

Shang, D. S. ;

Li, J. ;

Gang, J. L. ;

Zheng, D. N. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)

[6] Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature -: art. no. 224403 [J].

Odagawa, A ;

Sato, H ;

Inoue, IH ;

Akoh, H ;

Kawasaki, M ;

Tokura, Y ;

Kanno, T ;

Adachi, H .

PHYSICAL REVIEW B, 2004, 70 (22) :224403-1

[7]

PORTER DA, 1992, PHASE TRANSFORMATION, pCH2

[8] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].

ROSE, A .

PHYSICAL REVIEW, 1955, 97 (06) :1538-1544

[9] Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface [J].

Sawa, A ;

Fujii, T ;

Kawasaki, M ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4073-4075

[10] Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures [J].

Shang, D. S. ;

Wang, Q. ;

Chen, L. D. ;

Dong, R. ;

Li, X. M. ;

Zhang, W. Q. .

PHYSICAL REVIEW B, 2006, 73 (24)

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