Broad spectrum source for local access networks

被引:3
作者
Joyner, CH
Doerr, CR
Centanni, JC
Dreyer, K
Stulz, LW
机构
[1] Lucent Technologies, Holmdel, NJ 07733-0400
关键词
light emitting diodes; optical communication;
D O I
10.1049/el:19960508
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors present the first longitudinally distributed bandgap source which can be used as a broad spectrum (80nm FWHM) LED or a broad spectrum (11nm FWHM) laser centred at 1.53 mu m. The device was fabricated with low pressure MOVPE using selective area epitaxy. A multiple electrode design allows a flat topped output spectrum. Used as an LED, the authors couple -4.5 dBm into a lensed singlemode fibre; as a laser they couple 3dBm. They also observe amplitude self pulsing of the source at 68MHz slightly above laser threshold.
引用
收藏
页码:749 / 751
页数:3
相关论文
共 7 条
[1]   OPTICAL INTERFERENCE IN SUBCARRIER MULTIPLEXED SYSTEMS WITH MULTIPLE OPTICAL CARRIERS [J].
DESEM, C .
IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, 1990, 8 (07) :1290-1295
[2]   OPTIMUM DESIGN OF A PLANAR ARRAY OF TAPERED WAVE-GUIDES [J].
DRAGONE, C .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1990, 7 (11) :2081-2093
[3]  
IANNONE PP, 1995, OFC 95
[4]   EXTREMELY LARGE BAND-GAP SHIFTS FOR MQW STRUCTURES BY SELECTIVE EPITAXY ON SIO2 MASKED SUBSTRATES [J].
JOYNER, CH ;
CHANDRASEKHAR, S ;
SULHOFF, JW ;
DENTAI, AG .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (09) :1006-1009
[5]   A STRAINED-LAYER INGAAS-GAAS-ALGAAS SINGLE-QUANTUM-WELL BROAD-SPECTRUM LED BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
OSOWSKI, ML ;
COCKERILL, TM ;
LAMMERT, RM ;
FORBES, DV ;
ACKLEY, DE ;
COLEMAN, JJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (11) :1289-1292
[6]   BROAD-BAND EMISSION FROM INGAAS-GAAS-ALGAAS LED WITH INTEGRATED ABSORBER BY SELECTIVE-AREA MOCVD [J].
OSOWSKI, ML ;
LAMMERT, RM ;
FORBES, DV ;
ACKLEY, DE ;
COLEMAN, JJ .
ELECTRONICS LETTERS, 1995, 31 (17) :1498-1499
[7]   1.24-1.66-MU-M QUANTUM ENERGY TUNING FOR SIMULTANEOUSLY GROWN INGAAS/INP QUANTUM-WELLS BY SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY [J].
SUZUKI, M ;
AOKI, M ;
TSUCHIYA, T ;
TANIWATARI, T .
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :249-255