Donor and acceptor energies for muonium in GaAs

被引：25

作者：

Lichti, R. L. ^{[1
]}

Bani-Salameh, H. N.

Carroll, B. R.

Chow, K. H.

Hitti, B.

Kreitzman, S. R.

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada

[3] TRIUMF, Vancouver, BC V6T 2A3, Canada

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.76.045221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Analysis of existing data on muonium in GaAs provides an extensive set of ionization energies and barriers for motion and site transitions. Within an accepted model of muonium behavior in III-V compounds, these results establish the energy relationships among observed muonium centers in GaAs, including the metastable states. This analysis places the (0/+) donor level at 0.17 eV below the conduction band edge and the (-/0) acceptor level at roughly 0.60 eV above the top of the valence band for this very light hydrogen isotope, thus locating the muonium equivalent of the H(+/-) pinning level about 0.21 eV above midgap in GaAs, nearly 0.5 eV higher than predicted.

引用

收藏

页数：5

相关论文

共 23 条

[1] Diffusion, trapping, and relaxation of Mu(+) and Mu(-) heavily-doped GaAs [J].

Chow, KH ;

Cox, SFJ ;

Davis, EA ;

Dunsiger, SR ;

Estle, TL ;

Hitti, B ;

Kiefl, RF ;

Lichti, RL .

HYPERFINE INTERACTIONS, 1997, 105 (1-4) :309-314

[2] Muonium analog of hydrogen passivation:: Observation of the Mu+-Zn- reaction in GaAs -: art. no. 216403 [J].

Chow, KH ;

Hitti, B ;

Kiefl, RF ;

Lichti, RL ;

Estle, TL .

PHYSICAL REVIEW LETTERS, 2001, 87 (21) :216403-1

[3] Diffusion and charge dynamics of negatively charged muonium in n-type GaAs [J].

Chow, KH ;

Hitti, B ;

Kiefl, RF ;

Dunsiger, SR ;

Lichti, RL ;

Estle, TL .

PHYSICAL REVIEW LETTERS, 1996, 76 (20) :3790-3793

[4] STRUCTURE OF NEGATIVELY CHARGED MUONIUM IN N-TYPE GAAS [J].

CHOW, KH ;

KIEFL, RF ;

MACFARLANE, WA ;

SCHNEIDER, JW ;

COOKE, DW ;

LEON, M ;

PACIOTTI, M ;

ESTLE, TL ;

HITTI, B ;

LICHTI, RL ;

COX, SFJ ;

SCHWAB, C .

PHYSICAL REVIEW B, 1995, 51 (20) :14762-14765

[5]

Chow KH, 1998, SEMICONDUCT SEMIMET, V51, P137

[6] Donor level of interstitial hydrogen in GaAs [J].

Dobaczewski, L ;

Nielsen, KB ;

Larsen, AN ;

Peaker, AR .

PHYSICA B-CONDENSED MATTER, 2006, 376 :614-617

[7] BOND-CENTERED HYDROGEN OR MUONIUM IN DIAMOND - THE EXPLANATION FOR ANOMALOUS MUONIUM AND AN EXAMPLE OF METASTABILITY [J].

ESTLE, TL ;

ESTREICHER, S ;

MARYNICK, DS .

PHYSICAL REVIEW LETTERS, 1987, 58 (15) :1547-1550

[8] Site stability, diffusion, and charge dynamics for muonium in GaAs [J].

Estle, TL ;

Chow, KH ;

Cox, SFJ ;

Davis, EA ;

Hitti, B ;

Kiefl, RF ;

Lichti, RL ;

Schwab, C .

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 :849-854

[9] D, H, and Mu in GaN: Theoretical predictions at finite temperatures [J].

Estreicher, SK ;

Sanati, M .

PHYSICA B-CONDENSED MATTER, 2006, 374 :363-367

[10] HYDROGEN-RELATED DEFECTS IN CRYSTALLINE SEMICONDUCTORS - A THEORISTS PERSPECTIVE [J].

ESTREICHER, SK .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1995, 14 (7-8) :319-412