''Concerted'' regeneration of electroformed metal-insulator-metal devices

被引:7
作者
Sharpe, RG [1 ]
Palmer, RE [1 ]
机构
[1] UNIV BIRMINGHAM,SCH PHYS & SPACE RES,NANOSCALE PHYS RES LAB,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
关键词
D O I
10.1063/1.362537
中图分类号
O59 [应用物理学];
学科分类号
摘要
Filament regeneration has been investigated in electroformed Cu-SiOx-Cu sandwich devices at cryogenic temperatures (approximate to 125 K). The initial regeneration characteristics can be modeled by proposing a new scheme, which we term ''concerted regeneration.'' This is the preferential regeneration of filaments located close to intact filaments (which generate a local increase in temperature via power dissipation). This coordination in the regeneration of filaments can also cause ''explosive regeneration,'' the rapid regeneration of a batch of filaments, and thus a sudden jump in the device current, and also ''concerted rupture,'' a sudden drop in conductivity due to a batch of filaments rupturing simultaneously. (C) 1996 American Institute of Physics.
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页码:8565 / 8570
页数:6
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