TIME-DEPENDENCE OF THE THERMAL-VOLTAGE MEMORY EFFECT IN THIN SILICON MONOXIDE FILMS

[1] TEMPERATURE-DEPENDENCE OF VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE IN AN ELECTROFORMED CU-SIOX-CU STRUCTURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 559 - 563

[2] TIME, TEMPERATURE AND PRESSURE-DEPENDENCE OF CIRCULATING AND EMISSION CURRENTS IN SANDWICH STRUCTURES OF CU-SIO/GEO2-CU [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (02) : 227 - 238

[3] COMMENTS ON ELECTRON-EMISSION FROM METAL-CDS-INSULATOR-METAL AND METAL-INSULATOR-CDS-METAL THIN-FILM DEVICES [J]. THIN SOLID FILMS, 1972, 11 (01) : 187 - &

[4] Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9

[5] CURRENT-VOLTAGE CHARACTERISTICS, DIELECTRIC-BREAKDOWN AND POTENTIAL DISTRIBUTION MEASUREMENTS IN AU-SIOX-AU THIN-FILM DIODES AND TRIODES [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (02) : 157 - 175

[6] RELATIONSHIP OF THE CURRENT-VOLTAGE CHARACTERISTICS TO THE DISTRIBUTION OF FILAMENT RESISTANCES IN ELECTROFORMED MIM STRUCTURES [J]. THIN SOLID FILMS, 1979, 57 (01) : 33 - 38

[7] LOW-TEMPERATURE CONDUCTION AND BREAKDOWN PHENOMENA IN AU-SIO-CHI-AU THIN-FILM SANDWICH STRUCTURES [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1975, 38 (05) : 577 - 591

[8] Greene P.D., 1968, P S DEPOSITED THIN F, P167

[9] A STUDY OF THERMAL-VOLTAGE MEMORY EFFECTS IN M-I-M STRUCTURES WITH CO-EVAPORATED SIO/B2O3 AS THE INSULATOR MATERIAL [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1982, 53 (04) : 301 - 309

[10] OBSERVATIONS OF LOCAL DEFECTS CAUSED BY ELECTRICAL-CONDUCTION THROUGH THIN SANDWICH STRUCTURES OF AG-SIO - BAO-AG [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (01) : 25 - 42

[1] TEMPERATURE-DEPENDENCE OF VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE IN AN ELECTROFORMED CU-SIOX-CU STRUCTURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 559 - 563

[2] TIME, TEMPERATURE AND PRESSURE-DEPENDENCE OF CIRCULATING AND EMISSION CURRENTS IN SANDWICH STRUCTURES OF CU-SIO/GEO2-CU [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (02) : 227 - 238

[3] COMMENTS ON ELECTRON-EMISSION FROM METAL-CDS-INSULATOR-METAL AND METAL-INSULATOR-CDS-METAL THIN-FILM DEVICES [J]. THIN SOLID FILMS, 1972, 11 (01) : 187 - &

[4] Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9

[5] CURRENT-VOLTAGE CHARACTERISTICS, DIELECTRIC-BREAKDOWN AND POTENTIAL DISTRIBUTION MEASUREMENTS IN AU-SIOX-AU THIN-FILM DIODES AND TRIODES [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (02) : 157 - 175

[6] RELATIONSHIP OF THE CURRENT-VOLTAGE CHARACTERISTICS TO THE DISTRIBUTION OF FILAMENT RESISTANCES IN ELECTROFORMED MIM STRUCTURES [J]. THIN SOLID FILMS, 1979, 57 (01) : 33 - 38

[7] LOW-TEMPERATURE CONDUCTION AND BREAKDOWN PHENOMENA IN AU-SIO-CHI-AU THIN-FILM SANDWICH STRUCTURES [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1975, 38 (05) : 577 - 591

[8] Greene P.D., 1968, P S DEPOSITED THIN F, P167

[9] A STUDY OF THERMAL-VOLTAGE MEMORY EFFECTS IN M-I-M STRUCTURES WITH CO-EVAPORATED SIO/B2O3 AS THE INSULATOR MATERIAL [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1982, 53 (04) : 301 - 309

[10] OBSERVATIONS OF LOCAL DEFECTS CAUSED BY ELECTRICAL-CONDUCTION THROUGH THIN SANDWICH STRUCTURES OF AG-SIO - BAO-AG [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (01) : 25 - 42