TIME, TEMPERATURE AND PRESSURE-DEPENDENCE OF CIRCULATING AND EMISSION CURRENTS IN SANDWICH STRUCTURES OF CU-SIO/GEO2-CU

被引：7

作者：

ALRAMADHAN, FAS

HOGARTH, CA

ARSHAK, KI

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1984年 / 57卷 / 02期

关键词：

D O I：

10.1080/00207218408938903

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：227 / 238

页数：12

共 11 条

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[3]

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[6] A STUDY OF THERMAL-VOLTAGE MEMORY EFFECTS IN M-I-M STRUCTURES WITH CO-EVAPORATED SIO/B2O3 AS THE INSULATOR MATERIAL [J].

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[7]

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[8] MEMORY SWITCHING IN GEO2 FILMS [J].

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[9] ELECTRICAL-PROPERTIES OF GEO2 FILMS [J].

KHAN, MN ;

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[10] OBSERVATIONS OF LOCAL DEFECTS CAUSED BY ELECTRICAL-CONDUCTION THROUGH THIN SANDWICH STRUCTURES OF AG-SIO - BAO-AG [J].

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ABIDI, AA .

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