TIME-DEPENDENCE OF CIRCULATING AND EMISSION CURRENTS IN EVAPORATED THIN-FILM SANDWICH STRUCTURES OF AU-SIOX-AU

被引:6
作者
GOULD, RD [1 ]
HOGARTH, CA [1 ]
机构
[1] BRUNEL UNIV,DEPT PHYS,UXBRIDGE UB8 3PH,MIDDLESEX,ENGLAND
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 55卷 / 01期
关键词
D O I
10.1002/pssa.2210550137
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dependence of the circulating current (Ic) and emission current (Ie) in electroformed AuSiOxAu sandwich structures are investigated for time periods of up to 50 hours. It is observed that increases in Ic occur with time, but that an eventual decrease is only observed when the applied voltage Ub is set at Um (the voltage corresponding to the maximum in the n‐type negative resistance IcUb characteristic), and is not observed during the period of test if Ub is set at Uu (the value corresponding to the current minimum in the IcUb characteristic). Ie is found to fall rapidly immediately after the forming process. The results are qualitatively explained in terms of the filamentary model of electroforming. Comparison of these results with earlier results on ZnS and CdS, reveals significant differences. However these differences are accountable in terms of the filamentary model if differences in the rates of filament establishment and permanent filament destruction are taken into account. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:325 / 332
页数:8
相关论文
共 29 条
[1]   ELECTRICAL PROPERTIES OF AL-AL203-METAL STRUCTURES [J].
BARRIAC, C ;
PINARD, P ;
DAVOINE, F .
PHYSICA STATUS SOLIDI, 1969, 34 (02) :621-&
[2]  
BARRIAC C, 1968, CR ACAD SCI B PHYS, V266, P423
[3]   ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].
DEARNALEY, G ;
STONEHAM, AM ;
MORGAN, DV .
REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+
[4]  
Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9
[5]   CURRENT-VOLTAGE CHARACTERISTICS, DIELECTRIC-BREAKDOWN AND POTENTIAL DISTRIBUTION MEASUREMENTS IN AU-SIOX-AU THIN-FILM DIODES AND TRIODES [J].
GOULD, RD ;
HOGARTH, CA .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (02) :157-175
[6]   RELATIONSHIP OF THE CURRENT-VOLTAGE CHARACTERISTICS TO THE DISTRIBUTION OF FILAMENT RESISTANCES IN ELECTROFORMED MIM STRUCTURES [J].
GOULD, RD .
THIN SOLID FILMS, 1979, 57 (01) :33-38
[7]   LOW-TEMPERATURE CONDUCTION AND BREAKDOWN PHENOMENA IN AU-SIO-CHI-AU THIN-FILM SANDWICH STRUCTURES [J].
GOULD, RD ;
HOGARTH, CA .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1975, 38 (05) :577-591
[8]   POTENTIAL DISTRIBUTIONS IN ELECTROFORMED MIM AND MIMIM STRUCTURES - COMMENT [J].
GOULD, RD ;
HOGARTH, CA .
THIN SOLID FILMS, 1975, 29 (01) :59-66
[9]   ANGULAR-DISTRIBUTION MEASUREMENTS OF ELECTRONS EMITTED FROM THIN-FILM AU-SIOX-AU DIODE AND TRIODE STRUCTURES [J].
GOULD, RD ;
HOGARTH, CA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :439-442
[10]   FURTHER OBSERVATIONS OF COHERENT SCATTERING OF HOT-ELECTRONS IN THIN GOLD-FILMS [J].
GOULD, RD ;
HOGARTH, CA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (07) :L92-&