Room-temperature ferromagnetism in Cu+ implanted ZnO nanowires

被引：65

作者：

Shuai, M.

Liao, L.

Lu, H. B.

Zhang, L.

Li, J. C. ^{[1
]}

Fu, D. J.

机构：

[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 13期

关键词：

D O I：

10.1088/0022-3727/41/13/135010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We experimentally showed ferromagnetism at above 300 K for ZnO nanowires prepared by reactive vapour deposition and subsequently implanted with 2 at% of Cu. The magnetic moments of the samples annealed in oxygen and in argon at 600 degrees C for 120 min are about 0.42 mu(B) and 0.33 mu(B) per Cu atom, respectively. No ferromagnetism-related secondary phase existed according to the results of x-ray diffraction, x-ray photoelectron spectroscopy and transmission electron microscopy including HRTEM and EELS mapping. It can be concluded that the d(9) configuration in the ground state of Cu2+ plays an important role in ferromagnetism. This controllable and shallow doped ion implantation technique may find potential applications in spintronic, especially nano-spintronic, devices.

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页数：5

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