Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor

被引：16

作者：

Majkusiak, B ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 09期

关键词：

bipolar transistors; electron tunneling; MOS devices; semiconductor device modeling;

D O I：

10.1109/16.711354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current-voltage (I-V) characteristics of the metal-insulator-semiconductor-insulator-metal (MISIM) tunnel transistor in the common base and common emitter configurations are studied experimentally and theoretically. The Al-SiO2-Si(n)-SiO2-Al transistors with oxide layers of about 2.5 nm thickness have been manufactured. The devices exhibit current gain above 30 in the common base configuration and sn;itching in the common emitter configuration. cl theoretical static model of the MISIM tunnel transistor has been developed and applied to analyze the measured current-voltage characteristics for both operation configurations. Excellent fit of the model to the experimental data has been achieved, Influence of oxide thickness and interface trap density on the switching voltage has been investigated theoretically.

引用

页码：1903 / 1911

页数：9

共 30 条

[1]

Chang C., 1983, International Electron Devices Meeting 1983. Technical Digest, P194

[2] EXPERIMENTAL-OBSERVATION OF SWITCHING IN MISM AND MISIM DEVICES [J].