Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD

被引：15

作者：

Bazylenko, MV ^{[1
]}

Gross, M ^{[1
]}

Chu, PL ^{[1
]}

Moss, D ^{[1
]}

机构：

[1] UNIV SYDNEY,OPT FIBRE TECHNOL CTR,SYDNEY,NSW 2006,AUSTRALIA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 13期

关键词：

thin film devices; chemical vapour deposition; optical waveguides;

D O I：

10.1049/el:19960791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated that a novel thin film growth technique, hollow cathode PECVD, previously used to produce low-loss glass waveguides, can also produce intrinsically (no hydrogen loading) very photosensitive (to UV) germanosilicate waveguide material. In addition, the sign of the photosensitivity can be altered by varying the growth conditions.

引用

页码：1198 / 1199

页数：2

共 7 条

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