DIODE AND HOLLOW-CATHODE ETCHING IN CF4

被引：16

作者：

DAVIES, KE

HORWITZ, CM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.575778

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2705 / 2708

页数：4

共 18 条

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[3]

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[4]

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[6]

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[7] SILICON DEPOSITION IN DIODE AND HOLLOW-CATHODE SYSTEMS [J].

HORWITZ, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (03) :443-449

[8] RADIO-FREQUENCY SPUTTERING - THE SIGNIFICANCE OF POWER INPUT [J].

HORWITZ, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04) :1795-1800

[9] HOLLOW-CATHODE ETCHING AND DEPOSITION [J].

HORWITZ, CM ;

BORONKAY, S ;

GROSS, M ;

DAVIES, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1837-1844

[10] HOLLOW-CATHODE REACTIVE SPUTTER ETCHING - A NEW HIGH-RATE PROCESS [J].

HORWITZ, CM .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :977-979

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