Where do the dopants go?

被引：158

作者：

Roy, S ^{[1
]}

Asenov, A ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

SCIENCE | 2005年 / 309卷 / 5733期

关键词：

D O I：

10.1126/science.1111104

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

[No abstract available]

引用

页码：388 / 390

页数：3

共 13 条

[1]

BURNETT D, 1994, 1994 SYMPOSIUM ON VLSI TECHNOLOGY, P15, DOI 10.1109/VLSIT.1994.324400

[2] Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells [J].

Cheng, B ;

Roy, S ;

Roy, G ;

Adamu-Lema, F ;

Asenov, A .

SOLID-STATE ELECTRONICS, 2005, 49 (05) :740-746

[3] FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY [J].

HOENEISEN, B ;

MEAD, CA .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :819-+

[4]

Hon-Sum Wong, 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P705, DOI 10.1109/IEDM.1993.347215

[5] EFFECT OF RANDOMNESS IN DISTRIBUTION OF IMPURITY ATOMS ON FET THRESHOLDS [J].

KEYES, RW .

APPLIED PHYSICS, 1975, 8 (03) :251-259

[6] EXPERIMENTAL-STUDY OF THRESHOLD VOLTAGE FLUCTUATION DUE TO STATISTICAL VARIATION OF CHANNEL DOPANT NUMBER IN MOSFETS [J].

MIZUNO, T ;

OKAMURA, J ;

TORIUMI, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :2216-2221

[7]

Moore G. E., 1965, ELECTRONICS, V38, P114, DOI [DOI 10.1109/N-SSC.2006.4785860, 10.1109/N-SSC.2006.4785860]

[8]

Semiconductor Industry Association, 2001, INT TECHN ROADM SEM

[9] THRESHOLD VOLTAGE MISMATCH IN SHORT-CHANNEL MOS-TRANSISTORS [J].

STEYAERT, M ;

BASTOS, J ;

ROOVERS, R ;

KINGET, P ;

SANSEN, W ;

GRAINDOURZE, B ;

PERGOOT, A ;

JANSSENS, E .

ELECTRONICS LETTERS, 1994, 30 (18) :1546-1548

[10] Modeling statistical dopant fluctuations in MOS transistors [J].

Stolk, PA ;

Widdershoven, FP ;

Klaassen, DBM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1960-1971

← 1 2 →