The role of Auger recombination in InAs 1.3-/μm quantum-dot lasers investigated using high hydrostatic pressure

被引:55
作者
Marko, IP [1 ]
Andreev, AD
Adams, AR
Krebs, R
Reithmaier, JP
Forchel, A
机构
[1] Univ Surrey, Adv Technol Inst, Surrey GU2 7XH, England
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
Auger recombination; hydrostatic high pressure; InAs; quantum dot; recombination mechanisms; semiconductor laser; threshold current;
D O I
10.1109/JSTQE.2003.819504
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
InAs quantum-dot (QD) lasers were investigated in the temperature range 20-300 K and under hydrostatic pressure in the range of 0-12 kbar at room temperature. The results indicate that Auger recombination is very important in 1.3-mum QD lasers at room temperature and it is, therefore, the possible cause of the relatively low characteristic temperature observed, of T-0 = 41 K. In the 980-mn QD lasers where T-0 = 110-130 K, radiative recombination dominates. The laser emission photon energy E-las increases linearly with pressure p at 10.1 and 8.3 meV/kbar for 980 nm and 1.3-mum QD lasers, respectively. For the 980-mn QD lasers the threshold current increases with pressure at a rate proportional to the square of the photon energy E-las(2). However, la the threshold current of the 1.3-mum QD laser decreases. by 26% over a 12-kbar pressure range. This demonstrates the presence of a nonradiative recombination contribution to the threshold current, which decreases with increasing pressure. The authors show that this nonradiative contribution is Auger recombination. The results are discussed in the framework of a theoretical model based on the electronic structure and radiative recombination calculations carried out using an 8 x 8 k(.)p Hamiltonian.
引用
收藏
页码:1300 / 1307
页数:8
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