Low-threshold high-TO 1.3-μm InAs quantum-dot lasers due to P-type modulation doping of the active region

被引：124

作者：

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 09期

基金：

美国国家科学基金会;

关键词：

laser measurements; laser resonators; quantum-dots; semiconductor lasers; 1.3 mu m;

D O I：

10.1109/LPT.2002.801597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-type doping is used to demonstrate high-T-o, low-threshold 1-3 mum InAs quantum-dot lasers. A 5-mum-wide oxide-confined stripe laser with a 700-mum-long cavity exhibits a pulsed T-o = 213 K (196 K CW) from 0 degreesC to 80 degreesC. At room temperature, the devices have a CW threshold current of similar to4.4 mA with an output power over 15 mW. The threshold at 100 degreesC is 8.4 mA with an output power over 8 mW.

引用

页码：1231 / 1233

页数：3

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