Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SIC

被引:13
作者
Macfarlane, PJ [1 ]
Zvanut, ME [1 ]
机构
[1] Univ Alabama Birmingham, Dept Phys, Birmingham, AL 35294 USA
关键词
C-related defects; electron paramagnetic resonance; heat treatment; silicon carbide (SiC);
D O I
10.1007/s11664-999-0004-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electron paramagnetic resonance studies show that defects are activated in oxidized 3C-SiC and 6H-SiC by heat-treatments at temperatures greater than 800 degrees C in dry (<1 ppm H2O) N-2 or O-2 ambients. Annealing in forming gas (7% H-2, 93% N-2) at 700 degrees C completely passivates the centers induced by the dry heat-treatment. By contrasting the generation and annealing kinetics for these centers with the well studied Si dangling bond, we suggest that the centers in the oxidized SiC are C dangling bonds created by hydrogen effusion during the dry heat-treatment.
引用
收藏
页码:144 / 147
页数:4
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