High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

被引：4

作者：

Chang, CS ^{[1
]}

Chang, SJ ^{[1
]}

Su, YK ^{[1
]}

Lai, WC ^{[1
]}

Kuo, CH ^{[1
]}

Wang, CK ^{[1
]}

Lin, YC ^{[1
]}

Hsu, YP ^{[1
]}

Shei, SC ^{[1
]}

Lo, HM ^{[1
]}

Ke, JC ^{[1
]}

Sheu, JK ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303384

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The n(+)-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n(+)-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 x 10(-3) Omega cm(2) specific contact resistance. The 20 mA forward voltage of the LED with ITO on n(+)-SPS upper contact was slightly higher than that of the LED with Ni/Au on n(+)-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n(+)-SPS upper contact. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2227 / 2231

页数：5

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