共 14 条
[1]
EVALUATION OF SIO2/(001)SI INTERFACE ROUGHNESS USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND SIMULATION
[J].
PHYSICAL REVIEW B,
1991, 44 (04)
:1616-1621
[2]
ATOMIC-STRUCTURE AT THE (111) SI-SIO2 INTERFACE
[J].
JOURNAL OF APPLIED PHYSICS,
1982, 53 (07)
:4884-4887
[3]
DC-RESISTIVE-HEATING-INDUCED STEP BUNCHING ON VICINAL SI (111)
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1990, 29 (12)
:L2254-L2256
[4]
SCANNING TUNNELING MICROSCOPY CHARACTERIZATION OF THE GEOMETRIC AND ELECTRONIC-STRUCTURE OF HYDROGEN-TERMINATED SILICON SURFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1988, 6 (02)
:519-523
[9]
ROUGHNESS EVALUATION OF THERMALLY OXIDIZED SI(111) SURFACES BY SCANNING FORCE MICROSCOPY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
1993, 32 (3B)
:1419-1422
[10]
SUZUKI T, 1986, JPN J APPL PHYS 1, V25, P544, DOI 10.1143/JJAP.25.544