Band-gap bowing calculation of SixSn1-x alloy

被引:41
作者
Ferhat, M
Zaoui, A
机构
[1] Univ Trieste, Dipartimento Fis Teor, INFM, I-34014 Trieste, Italy
[2] Inst Tronc Commun Technol, Phys Lab, Oran 31000, Algeria
关键词
D O I
10.1016/S1350-4495(00)00066-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Using ab initio pseudopotential method within the local density approximation we have investigated the electronic properties of SixSn1-x semiconducting alloy. The bowing parameter of the band-gap energy variation with alloy concentration is found to be large. We also analyzed its origin in terms of chemical and structural effects. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:81 / 85
页数:5
相关论文
共 29 条
[1]   BAND-STRUCTURE CALCULATION OF GESN AND SISN [J].
AMRANE, N ;
ABDERRAHMANE, SA ;
AOURAG, H .
INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (05) :843-848
[2]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[3]  
Benkabou F, 1998, PHYS STATUS SOLIDI B, V206, P635, DOI 10.1002/(SICI)1521-3951(199804)206:2<635::AID-PSSB635>3.0.CO
[4]  
2-J
[5]   OPTICAL BOWING IN ZINC CHALCOGENIDE SEMICONDUCTOR ALLOYS [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1986, 34 (08) :5992-5995
[6]   ENERGY-BAND STRUCTURE CALCULATION OF GEXSN1-X AND SIXSN1-X ALLOYS [J].
BOUHAFS, B ;
BENKABOU, F ;
FERHAT, M ;
KHELIFA, B ;
DUFOUR, JP ;
AOURAG, H .
INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (06) :967-972
[7]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[8]  
COODMAN CHI, 1982, IEE P I, V129, P189
[9]   BAND-GAPS IN SOME GROUP-IV MATERIALS - A THEORETICAL-ANALYSIS [J].
CORKILL, JL ;
COHEN, ML .
PHYSICAL REVIEW B, 1993, 47 (16) :10304-10309
[10]  
HELLWEGE KH, LANDOLTBORNSTEIN, V3