Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells

被引：23

作者：

Chen, CH ^{[1
]}

Chen, WH

Chen, YF

Lin, TY

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

[2] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期

关键词：

D O I：

10.1063/1.1604176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present microphotoluminescence (PL) and micro-Raman measurements with varying the applied electric field in InxGa1-xN/GaN multiple quantum wells (MQWs). The InGaN A(1)(LO) phonon was found to show a redshift in frequency with the increase of applied electric field. And, a blueshift in PL spectra has been observed when the applied electric field was increased. Quite interestingly, the change in the refractive index was also observed, which was determined accurately from the interference pattern shown in the emission spectra. This finding correlates very well with the blueshift of PL spectra and the redshift of the InGaN A(1)(LO) phonon. Based on the stress change induced by the compensation between piezoelectric and external fields, our results firmly establish that strong electro-optical and photoelastic effects do exist in InxGa1-xN/GaN MQWs, which is important in the design of optoelectronic devices. (C) 2003 American Institute of Physics.

引用

页码：1770 / 1772

页数：3

共 29 条

[1] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].