Diffraction-limited 1.3-mu m-wavelength tapered-gain-region lasers with >1-W CW output power

被引：29

作者：

Walpole, JN

Donnelly, JP

Groves, SH

Missaggia, LJ

Woodhouse, JD

Bailey, RJ

Napoleone, A

机构：

[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 11期

关键词：

D O I：

10.1109/68.541539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of the power in the central lobe of a diffraction-limited far-field radiation pattern.

引用

收藏

页码：1429 / 1431

页数：3

相关论文

共 8 条

[1] STRAINED-LAYER INGAASP DIODE-LASERS WITH TAPERED GAIN REGION FOR OPERATION AT LAMBDA=1.3-MU-M [J].

GROVERS, SH ;

DONNELLY, JP ;

WALPOLE, JN ;

WOODHOUSE, JD ;

MISSAGGIA, LJ ;

BAILEY, RJ ;

NAPOLEONE, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (11) :1286-1288

[2] HIGH-POWER, STRAINED-LAYER AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS [J].

KINTZER, ES ;

WALPOLE, JN ;

CHINN, SR ;

WANG, CA ;

MISSAGGIA, LJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) :605-608

[3] 5W, DIFFRACTION-LIMITED, TAPERED-STRIPE UNSTABLE RESONATOR SEMICONDUCTOR-LASER [J].

MEHUYS, D ;

OBRIEN, S ;

LANG, RJ ;

HARDY, A ;

WEICH, DF .

ELECTRONICS LETTERS, 1994, 30 (22) :1855-1856

[4] 1W CW SINGLE-FREQUENCY, DIFFRACTION-LIMITED UNSTABLE RESONATOR SEMICONDUCTOR-LASER WITH DISTRIBUTED-BRAGG-REFLECTOR MIRRORS [J].

OBRIEN, S ;

MEHUYS, D ;

LANG, RJ ;

WELCH, DF .

ELECTRONICS LETTERS, 1995, 31 (03) :203-205

[5] 2.0 W CW, DIFFRACTION-LIMITED OPERATION OF A MONOLITHICALLY INTEGRATED MASTER OSCILLATOR POWER-AMPLIFIER [J].

PARKE, R ;

WELCH, DF ;

HARDY, A ;

LANG, R ;

MEHUYS, D ;

OBRIEN, S ;

DZURKO, K ;

SCIFRES, D .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (03) :297-300

[6] HIGH-POWER STRAINED-LAYER INGAAS/ALGAAS TAPERED TRAVELING-WAVE AMPLIFIER [J].

WALPOLE, JN ;

KINTZER, ES ;

CHINN, SR ;

WANG, CA ;

MISSAGGIA, LJ .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :740-741

[7]

WALPOLE JN, 1994, C LAS ELECT 1994, V8, P1

[8] HIGH-POWER HIGH-GAIN MONOLITHICALLY INTEGRATED PREAMPLIFIER POWER-AMPLIFIER [J].

YEH, PS ;

WU, IF ;

JIANG, S ;

DAGENAIS, M .

ELECTRONICS LETTERS, 1993, 29 (22) :1981-1983