Hole transport and quasi-Fermi level splitting at the emitter-base junction in Pnp heterojunction bipolar transistors

被引：4

作者：

Datta, S ^{[1
]}

Roenker, KP ^{[1
]}

Cahay, MM ^{[1
]}

机构：

[1] Univ Cincinnati, Dept Elect & Comp Engn, Cincinnati, OH 45221 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.369186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hole transport across the emitter-base heterojunction in Pnp heterojunction bipolar transistors is considered and the amount of hole quasi-Fermi level splitting at the interface is analyzed. Hole injection at the emitter is shown to significantly limit the emitter current to a level more than an order of magnitude less than that predicted by the hole-base diffusion model. Due to the low hole mobility, hole drift diffusion across the emitter-base space charge region is shown to be of comparable importance to thermionic-tunneling emission in controlling hole injection into the base. (C) 1999 American Institute of Physics. [S0021-8979(99)01203-7].

引用

页码：1949 / 1955

页数：7

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