ELECTRON QUASI-FERMI LEVEL SPLITTING AT THE BASE EMITTER JUNCTION OF ALGAAS/GAAS HBTS

被引：17

作者：

PULFREY, DL

SEARLES, S

机构：

[1] Department of Electrical Engineering, University of British Columbia, Vancouver, BC

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/16.214752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double- heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant.

引用

收藏

页码：1183 / 1185

页数：3

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