A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology

被引：33

作者：

Zimmermann, H ^{[1
]}

Heide, T

机构：

[1] Vienna Tech Univ, Inst Elect Measurement & Circuit Design, A-1040 Vienna, Austria

[2] Alcatel SEL AG, D-70499 Stuttgart, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 07期

关键词：

integrated optoelectronics; optical receivers; photoreceivers; p-type-intrinsic-n-type photodiodes; Si;

D O I：

10.1109/68.930423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of a monolithically integrated optical silicon receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of I Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10(-9). The sensitivity of this OEIC in a 1.0-mum CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz.Ohm effective transimpedance bandwidth product of the implemented amplifier is achieved.

引用

页码：711 / 713

页数：3

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