Preparation of highly oriented bismuth titanate thin films by sol-gel process

被引：8

作者：

Kato, E ^{[1
]}

Watanabe, Y ^{[1
]}

Tsukamoto, T ^{[1
]}

Tsuchiya, T ^{[1
]}

机构：

[1] SCI UNIV TOKYO, FAC SCI, SHINJUKU KU, TOKYO 162, JAPAN

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1996年 / 104卷 / 11期

关键词：

Bi4Ti3O12 (BIT) thin film; highly c-axis oriented thin film; ferroelectric; sol-gel process;

D O I：

10.2109/jcersj.104.1015

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present study, an attempt is made to prepare a highly c-axis oriented thin film with the composition of Bi4Ti3O12 (BIT). Bismuth nitrate and titanium tetrabutoxide were used as raw materials. Acetylacetone and ethylene glycol were used as the solvents. The thin him was a single phase of BIT completely oriented along the c-axis on Pt substrate with good ferroelectric properties at room temperature : coercive field of 25 kV/cm, remanent polarization of 2.5 mu C/cm(2), dielectric constant of 130. The hey technique to highly c-axis oriented thin films was heat treatment of sol prepared by optimum combination of raw materials and solvents.

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页码：1015 / 1018

页数：4

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