Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures

被引:22
作者
Osinski, M [1 ]
Svimonishvili, T
Smolyakov, GA
Smagley, VA
Mackowiak, P
Nakwaski, W
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] Lodz Tech Univ, Inst Phys, PL-93005 Lodz, Poland
关键词
oxidation; oxide aperture; semiconductor lasers; semiconductor process modeling; surface-emitting lasers;
D O I
10.1109/68.930415
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Deal-Grove model of thermal oxidation kinetics is adapted to cylindrically symmetric mesa structures and applied to study steam oxidation of AlAs. Oxidation process parameters are extracted from available experimental data as functions of temperature and the AlAs layer thickness. The oxidation rate is found to be very sensitive not only to temperature, but also to the oxidation front position inside the mesa. The oxidation rate slows dean as the oxidation front moves into the mesa, reaches a minimum, and then accelerates at the final stages of the oxidation process. Complex nonmonotonic dependence of the oxidation process on layer thickness is also revealed.
引用
收藏
页码:687 / 689
页数:3
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