Damage production in ion implanted III-V compounds: A comparative study

被引：7

作者：

Wendler, E

机构：

来源：

MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES | 1997年 / 248-2卷

关键词：

ion implantation; damage production; critical temperatures; InP; GaAs; GaP; InAs; Rutherford Backscattering Analysis;

D O I：

10.4028/www.scientific.net/MSF.248-249.261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The damage production during ion implantation into InP, GaAs, GaP and InAs is investigated. The influence of the ion mass, the ion energy, the substrate temperature and of the dose rate is discussed. The results for the various materials can be understood within a uniform picture of critical temperatures which are in the order of 350-420K in the phosphides and 250-350K in the arsenides.

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页码：261 / 265

页数：5

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