Raman amplification and lasing in SiGe waveguides

被引：34

作者：

Claps, R ^{[1
]}

Raghunathan, V ^{[1
]}

Boyraz, O ^{[1
]}

Koonath, P ^{[1
]}

Dimitropoulos, D ^{[1
]}

Jalali, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA

来源：

OPTICS EXPRESS | 2005年 / 13卷 / 07期

关键词：

D O I：

10.1364/OPEX.13.002459

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We describe the first observation of spontaneous Raman emission, stimulated amplification, and lasing in a SiGe waveguide. A pulsed optical gain of 16dB and a lasing threshold of 25 W peak pulse power (20 mW average) is observed for a Si1-xGex waveguide with x = 7.5%. At the same time, a 40 GHz frequency downshift is observed in the Raman spectrum compared to that of a silicon waveguide. The spectral shift can be attributed to the combination of composition- and strain-induced shift in the optical phonon frequency. The prospect of Germanium-Silicon-on-Oxide as a flexible Raman medium is discussed. (C) 2005 Optical Society of America.

引用

页码：2459 / 2466

页数：8

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