Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain

被引：27

作者：

Chow, WW ^{[1
]}

Schneider, HC ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 26期

关键词：

D O I：

10.1063/1.1379784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A microscopic laser theory is used to investigate gain and threshold properties in a GaAsSb quantum-well laser. Depending on the geometry of the type-II quantum-well gain region, there may be appreciable band distortions due to electron-hole charge separation. The charge separation and accompanying band distortions lead to interesting optical behaviors, such as excitation-dependent oscillator strength and band edge energies. Implications to laser operation include significant blueshift of the gain peak with increasing injection current, and inhibition of spontaneous emission, which may result in threshold current reduction. (C) 2001 American Institute of Physics.

引用

页码：4100 / 4102

页数：3

共 12 条

[1] GaAsSb:: A novel material for 1.3μm VCSELs [J].