Demonstration of a 320x256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors

被引：130

作者：

Krishna, S

Forman, D

Annamalai, S

Dowd, P

Varangis, P

Tumolillo, T

Gray, A

Zilko, J

Sun, K

Liu, MG

Campbell, J

Carothers, D

机构：

[1] Univ New Mexico, Ctr High Technol Mat, ECE Dept, Albuquerque, NM 87106 USA

[2] Zia Laser Inc, Albuquerque, NM 87106 USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

[4] BAE Syst, Austin, NH 03061 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1924887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the demonstration of a two-color infrared focal plane array based on a voltage-tunable quantum dots-in-well (DWELL) design. The active region consists of multiple layers of InAs quantum dots in an In0.15Ga0.85As quantum well. Spectral response measurements yielded a peak at 5.5 mu m for lower biases and at 8-10 mu m for higher biases. Using calibrated blackbody measurements, the midwavelength and long wavelength specific detectivity (D*) were estimated to be 7.1 x 10(10) cm Hz(1/2)/ W(V-b= 1.0 V) and 2.6 x 10(10) cm Hz(1/2)/ WsVb= 2.6 V) at 78 K, respectively. This material was processed into a 320 x 256 array and integrated with an Indigo 9705 readout chip and thermal imaging was achieved at 80 K. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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