On the detectivity of quantum-dot infrared photodetectors

被引：63

作者：

Ryzhii, V ^{[1
]}

Khmyrova, I

Mitin, V

Stroscio, M

Willander, M

机构：

[1] Univ aizu, Comp Solid State Phys Lab, Aizu Wakamatsu 9658580, Japan

[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

[3] USA, Res Off, Res Triangle Pk, NC 27709 USA

[4] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden

[5] Univ Gothenburg, S-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1376435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the analysis of thermally-limited operation of quantum-dot infrared photodetectors (QDIPs). A device model is developed and used to calculate the QDIP detectivity as a function of the structural parameters, temperature, and applied voltage, as well as to determine the conditions for the detectivity maximum. The QDIP detectivity is compared with that of quantum-well infrared photodetectors (QWIPs). This work clarifies why the existing QDIPs are still inferior to QWIPs and shows that a significant improvement in the QDIP performance can be accomplished by the utilization of dense QD arrays with small QDs. (C) 2001 American Institute of Physics.

引用

页码：3523 / 3525

页数：3

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