Mass spectroscopic study for vaporization characteristics of Ba(TMHD)(2) and Sr(TMHD)(2) in electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition

被引:7
作者
Lee, JS
Song, HW
Kim, KS
Yu, BG
Jeong, YH
Jiang, ZT
No, K
机构
[1] ELECT & TELECOMMUN RES INST,TAEJON 305606,SOUTH KOREA
[2] MANDO MACHINERY CORP,CTR RES & DEV,KYONGGI DO,SOUTH KOREA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 01期
关键词
D O I
10.1116/1.580479
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The decomposition and the degradation characteristics of Ba(TMHD)(2) and Sr(TMHD)(2) with storage time were analyzed using differential scanning calorimetry. Mass spectrometer monitoring of source vapors with Ar and NH3 carrier gases in an electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition system was also performed. Introducing NH3 as a carrier gas, significantly improved the volatility and the thermal stability of the precursors, as well as the uniformity and the surface smoothness of strontium carbonate films. Required vaporization temperatures of the precursors were lower with the introduction of NH3 gas than with conventional Ar carrier gas. The degradation with the storage time and with oligmerization at the evaporation temperature for Ba(TMHD)(2) was greater compared to Sr(TMHD)(2). (C) 1997 American Vacuum Society.
引用
收藏
页码:72 / 76
页数:5
相关论文
共 12 条
[1]   SPECTROSCOPIC STUDY ON A DISCHARGE PLASMA OF MOCVD SOURCE GASES FOR HIGH-TC SUPERCONDUCTING FILMS [J].
HARIMA, H ;
OHNISHI, H ;
HANAOKA, K ;
TACHIBANA, K ;
KOBAYASHI, M ;
HOSHINOUCHI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (10) :1932-1938
[2]   STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2) [J].
KAWAHARA, T ;
YAMAMUKA, M ;
MAKITA, T ;
NAKA, J ;
YUUKI, A ;
MIKAMI, N ;
ONO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5129-5134
[3]   SYNTHESIS OF NOVEL SR SOURCES FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF SRTIO3 [J].
KIMURA, T ;
YAMAUCHI, H ;
MACHIDA, H ;
KOKUBUN, H ;
YAMADA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5119-5124
[4]   PREPARATION OF SRTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
KOBAYASHI, I ;
WAKAO, Y ;
TOMINAGA, K ;
OKADA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08) :4680-4683
[5]  
LESAICHERRE PY, 1993, MATER RES SOC S P, V310, P487
[6]   EPITAXIAL-GROWTH OF SRTIO3/YBA2CU3O7-X HETEROSTRUCTURES BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
LIANG, S ;
CHERN, CS ;
SHI, ZQ ;
LU, P ;
SAFARI, A ;
LU, Y ;
KEAR, BH ;
HOU, SY .
APPLIED PHYSICS LETTERS, 1994, 64 (26) :3563-3565
[7]  
MATSUBARA S, 1990, MATER RES SOC SYMP P, V200, P243, DOI 10.1557/PROC-200-243
[8]  
PENNEBAKER WB, 1969, IBM J RES DEV NOV, P686
[9]   BARRIER LAYERS FOR REALIZATION OF HIGH CAPACITANCE DENSITY IN SRTIO3 THIN-FILM CAPACITOR ON SILICON [J].
SAKUMA, T ;
YAMAMICHI, S ;
MATSUBARA, S ;
YAMAGUCHI, H ;
MIYASAKA, Y .
APPLIED PHYSICS LETTERS, 1990, 57 (23) :2431-2433
[10]   STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SRTIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
YAMAGUCHI, H ;
LESAICHERRE, PY ;
SAKUMA, T ;
MIYASAKA, Y ;
ISHITANI, A ;
YOSHIDA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4069-4073