Pixelless 1.5-μm up-conversion imaging device fabricated by wafer fusion

被引：18

作者：

Ban, D ^{[1
]}

Luo, H ^{[1
]}

Liu, HC ^{[1
]}

Wasilewski, ZR ^{[1
]}

Buchanan, M ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 07期

关键词：

charge coupled devices (CCDs); image converters; infrared image sensors; light-emitting diodes (LEDs); optical frequency conversion; pixelless imaging; wafer-fusion;

D O I：

10.1109/LPT.2005.849987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We designed and fabricated a first-ever pixelless optical up-conversion imaging device using wafer-fusion technology. The device consists of an In0.53Ga0.4As-InP p-i-n detector and a GaAs-AlGaAs light-emitting diode (LED), which were grown on an InP and a GaAs substrate, respectively, and wafer-bonded together. The layer structures and doping profiles of the common region linking the detector and LED were designed such that lateral carrier diffusion was successfully suppressed while effective electrical connection was well preserved. Pixelless up-conversion imaging from 1.5 to 0.87 mu m was demonstrated. Moreover, an internal electrical gain of over 100 was observed for the detector part of the integrated device. The internal up-conversion quantum efficiency was measured to be similar to 50% at room temperature.

引用

页码：1477 / 1479

页数：3

共 9 条

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