Optimized GaAs/AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices

被引:50
作者
Ban, D [1 ]
Luo, H [1 ]
Liu, HC [1 ]
Wasilewski, ZR [1 ]
SpringThorpe, AJ [1 ]
Glew, R [1 ]
Buchanan, M [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1063/1.1785867
中图分类号
O59 [应用物理学];
学科分类号
摘要
Achieving a high internal quantum efficiency in GaAs/AlGaAs based light-emitting diodes (LEDs) for room-temperature operation at low current-density injection is crucial for applications such as optical up-converters based on the integration of LEDs and photodetectros. We report the experimental results as well as the theoretical analyses of the internal quantum efficiency of GaAs/AlGaAs LEDs as a function of the p-doping concentration of the active region for low current injection operation. By optimizing the doping concentration, we have achieved a close to 100% internal quantum efficiency for room-temperature operation of LEDs in the low injection current-density range, i.e., around 0.1 A/cm(2). An optical up-converter was fabricated using wafer-fusion technology by integrating the optimized GaAs/AlGaAs LED with an InGaAs/InP photodetector. The internal up-conversion quantum efficiency was measured to be 76%. (C) 2004 American Institute of Physics.
引用
收藏
页码:5243 / 5248
页数:6
相关论文
共 28 条
  • [1] [Anonymous], 1996, Devices for optoelectronics
  • [2] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES
    ASBECK, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 820 - 822
  • [3] 1.5 to 0.87 μm optical upconversion device fabricated by wafer fusion
    Ban, D
    Luo, H
    Liu, HC
    SpringThorpe, AJ
    Glew, R
    Wasilewski, ZR
    Buchanan, M
    [J]. ELECTRONICS LETTERS, 2003, 39 (15) : 1145 - 1147
  • [4] Impact of planar microcavity effects on light extraction - Part II: Selected exact simulations and role of photon recycling
    Benisty, H
    De Neve, H
    Weisbuch, C
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) : 1632 - 1643
  • [5] High differential efficiency (>16%) quantum dot microcavity light emitting diode
    Chen, H
    Zou, Z
    Cao, C
    Deppe, DG
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (03) : 350 - 352
  • [6] Efficient light emitting diodes by photon recycling and their application in pixelless infrared imaging devices
    Dupont, E
    Chiu, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) : 1023 - 1028
  • [7] Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperature
    Dupont, E
    Gao, M
    Buchanan, M
    Wasilewski, ZR
    Liu, HC
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (05) : L21 - L23
  • [8] Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes
    Kane, MJ
    Braithwaite, G
    Emeny, MT
    Lee, D
    Martin, T
    Wright, DR
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (08) : 943 - 945
  • [9] Wafer-fused p-i-n InGaAs/Si photodiode with photogain
    Kang, Y
    Mages, P
    Clawson, AR
    Lau, SS
    Lo, YH
    Yu, PKL
    Pauchard, A
    Zhu, Z
    Zhou, Y
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (07) : 970 - 972
  • [10] Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C
    Karim, A
    Abraham, P
    Lofgreen, D
    Chiu, YJ
    Piprek, J
    Bowers, J
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2632 - 2633