Nonconservative Ostwald ripening of dislocation loops in silicon

被引：7

作者：

Huang, YL ^{[1
]}

Seibt, M ^{[1
]}

Plikat, B ^{[1
]}

机构：

[1] Univ Gottingen, Inst Phys 4, D-37073 Gottingen, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of the proximity of the surface on the ripening behavior of dislocation loops in preamorphized silicon. Starting from well-defined initial conditions, we have varied the location depth of the loops by successive chemical removal of surface layers and measured changes of the size-distribution function during subsequent annealing by means of transmission electron microscopy. Our results show that the amount of Si atoms bound in the loops is not conserved during annealing and that the loop location depth has a prominent effect on the ripening kinetics. Both these observations prove the nonconservative nature of Ostwald ripening of dislocation loops near wafer surfaces. In addition, we observed different ripening kinetics for annealing in vacuum and in Ar which show that different boundary conditions at the surface are established during annealing in these two ambients. (C) 1998 American Institute of Physics. [S0003-6951(98)01146-2].

引用

页码：2956 / 2958

页数：3

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