Near-field ultraviolet photoluminescence spectroscopy for evaluating the crystallinity of polycrystalline zinc oxide

被引:13
作者
Yatsui, T
Shimizu, T
Yamamoto, Y
Kourogi, M
Ohtsu, M
Lee, GH
机构
[1] Japan Sci & Technol Corp, Tokyo 1940004, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Kanagawa 2268502, Japan
[3] Dong Eui Univ, Dept Adv Mat Engn, Pusan 614714, South Korea
关键词
D O I
10.1063/1.1410357
中图分类号
O59 [应用物理学];
学科分类号
摘要
By extending the optical near-field technique to the ultraviolet region, a two-dimensional evaluation of the optical properties and crystallinity of polycrystalline zinc oxide (ZnO) was carried out at room temperature. Using an ultraviolet fiber probe with an aperture diameter of 80 nm, we obtained spatially resolved photoluminescence spectra from individual ZnO nanocrystallites; the emission intensity depended on the topography and on crystal orientation. (C) 2001 American Institute of Physics.
引用
收藏
页码:2369 / 2371
页数:3
相关论文
共 13 条
[1]   High temperature excitonic stimulated emission from ZnO epitaxial layers [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040
[2]   PSEUDOPOTENTIAL BAND-STRUCTURE OF ZNO [J].
BLOOM, S ;
ORTENBUR.I .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (02) :561-566
[3]   Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].
Chen, YF ;
Bagnall, DM ;
Koh, HJ ;
Park, KT ;
Hiraga, K ;
Zhu, ZQ ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918
[4]   Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].
Cho, SL ;
Ma, J ;
Kim, YK ;
Sun, Y ;
Wong, GKL ;
Ketterson, JB .
APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763
[5]   PHOTODEPOSITION RATES OF METAL FROM METAL ALKYLS [J].
KRCHNAVEK, RR ;
GILGEN, HH ;
CHEN, JC ;
SHAW, PS ;
LICATA, TJ ;
OSGOOD, RM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :20-26
[6]   Blue shift in room temperature photoluminescence from photo-chemical vapor deposited ZnO films [J].
Lee, GH ;
Yamamoto, Y ;
Kourogi, M ;
Ohtsu, M .
THIN SOLID FILMS, 2001, 386 (01) :117-120
[7]   Fabrication of ZnO nanostructure using near-field optical technology [J].
Lee, GH ;
Yamamoto, Y ;
Kourogi, M ;
Ohtsu, M .
NEAR-FIELD OPTICS: PHYSICS, DEVICES, AND INFORMATION PROCESSING, 1999, 3791 :132-139
[8]   Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope [J].
Matsuda, K ;
Saiki, T ;
Saito, H ;
Nishi, K .
APPLIED PHYSICS LETTERS, 2000, 76 (01) :73-75
[9]   Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO [J].
Ohta, H ;
Orita, M ;
Hirano, M ;
Hosono, H .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5720-5725
[10]  
OHTSU M, 1999, NEAR FIELD NANO ATOM, pCH3