Growth of Si1-xGex alloys by MBE

被引：4

作者：

Pinto, N ^{[1
]}

Murri, R ^{[1
]}

Trojani, L ^{[1
]}

Majni, G ^{[1
]}

Mengucci, P ^{[1
]}

Lucchetti, L ^{[1
]}

机构：

[1] UNIV ANCONA,DIPARTIMENTO SCI MAT & TERRA,I-60131 ANCONA,ITALY

来源：

ADVANCES IN CRYSTAL GROWTH | 1996年 / 203卷

关键词：

MBE; Si-Ge; islands formation;

D O I：

10.4028/www.scientific.net/MSF.203.79

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a study of island formation during MBE growth of Si1-xGex layers at different substrate temperatures (T-s) and germanium fluxes. Electron microscopy characterizations (SEM, TEM and EDS) of films deposited at T-s = 600 degrees C revealed the presence of Si-Ge islands grown in a Stranski-Krastanow mode, whose dimensions and densities have been found to be linked to germanium nux. Moreover, layers prepared at different values of T-s, are epitaxial and continuous for T-s less than or equal to 500 degrees C and show the presence of a strain field in the Si substrate near the interface and the formation of dislocations whose low density cannot justify the complete relaxation of the system. We propose a simple explanation of the obtained results.

引用

页码：79 / 84

页数：6

共 10 条

[1] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].

APETZ, R ;

VESCAN, L ;

HARTMANN, A ;

DIEKER, C ;

LUTH, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447

[2]

CHERN CH, 1991, MATER RES SOC SYMP P, V220, P175, DOI 10.1557/PROC-220-175

[3]

CHEVRIER J, 1994, J PHYS I, V4, P1309, DOI 10.1051/jp1:1994190

[4] STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS [J].

CHRISTIANSEN, S ;

ALBRECHT, M ;

STRUNK, HP ;

MAIER, HJ .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3617-3619

[5] THE CHARACTERISTICS OF STRAIN-MODULATED SURFACE UNDULATIONS FORMED UPON EPITAXIAL SI1-XGEX ALLOY LAYERS ON SI [J].

CULLIS, AG ;

ROBBINS, DJ ;

PIDDUCK, AJ ;

SMITH, PW .

JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :333-343

[6] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[7]

EAGLESHAM DJ, 1990, MATER RES SOC SYMP P, V198, P51, DOI 10.1557/PROC-198-51

[8] ANOMALOUS STRAIN RELAXATION IN SIGE THIN-FILMS AND SUPERLATTICES [J].

LEGOUES, FK ;

MEYERSON, BS ;

MORAR, JF .

PHYSICAL REVIEW LETTERS, 1991, 66 (22) :2903-2906

[9]

MO YW, 1990, PHYS REV LETT, V65, P1020, DOI 10.1142/S0217984990001732

[10]

VESCAN L, 1992, MATER RES SOC SYMP P, V263, P23, DOI 10.1557/PROC-263-23

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