Formation of highly conductive p-type ZnSe using Li3N diffusion

被引：6

作者：

Honda, T ^{[1
]}

Lim, SW ^{[1
]}

Yanashima, K ^{[1
]}

Inoue, K ^{[1
]}

Hara, K ^{[1
]}

Munekata, H ^{[1
]}

Kukimoto, H ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 07期

关键词：

zinc selenide; MOVPE; lithium nitride; p-type doping; diffusion; ohmic contact;

D O I：

10.1143/JJAP.35.3878

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved high concentration p-type doping of ZnSe grown by metalorganic vapor phase epitaxy using a Li3N diffusion technique. The average hole concentration in the ZnSe:(Li,N) layer formed at a diffusion temperature of 470 degrees C was as high as 1 x 10(18) cm(-3), and the layer exhibited a resistivity of rho = 0.3 Ohm . cm and a hole mobility of mu(p) = 18 cm(2)/V . s.

引用

页码：3878 / 3879

页数：2

共 9 条

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