SELECTIVE ETCHING OF GAAS FOR ZNSE BASED SURFACE-EMITTING LASERS

被引：11

作者：

HONDA, T ^{[1
]}

YANASHIMA, K ^{[1
]}

KOYAMA, F ^{[1
]}

KUKIMOTO, H ^{[1
]}

IGA, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 02期

关键词：

ZINC SELENIDE; GALLIUM ARSENIDE; BLUE LASER; SURFACE EMITTING LASER; SPRAY ETCH;

D O I：

10.1143/JJAP.33.1211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated a selective etch process of removing a GaAs substrate for the fabrication of ZnSe-based surface emitting lasers using the PA etchant (NH3OH:H2O2:H2O=x:33:10) and employing a spray method. The etch rate of a GaAs substrate was 3.7 mum/min with a preferential etch rate ratio of over 20 against ZnSe layers. The surface of the ZnSSe layer after removal of a substrate was smooth enough to fabricate ZnSe-based surface emitting lasers.

引用

页码：1211 / 1212

页数：2

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