HIGH P-TYPE DOPING OF ZNSE USING LI3N DIFFUSION

被引：12

作者：

LIM, SW ^{[1
]}

HONDA, T ^{[1
]}

KOYAMA, F ^{[1
]}

IGA, K ^{[1
]}

INOUE, K ^{[1
]}

YANASHIMA, K ^{[1
]}

MUNEKATA, H ^{[1
]}

KUKIMOTO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 19期

关键词：

D O I：

10.1063/1.112699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved a highly doped p-type ZnSe layer using a Li3N diffusion technique. The hole concentration of the p-type ZnSe layer, grown on a GaAs substrate by metalorganic vapor phase epitaxy, reached a level as high as 10(17) cm(-3). With the diffusion temperature of 470 degrees C, the resistivity of the layer is as low as 0.4 Omega cm, with hole concentration p>9X10(17) cm(-3) and hole mobility mu(p) = 17 cm(2)/V s. We made an ohmic contact by using this p(+)-type ZnSe as a contact layer for p-ZnSe epilayers. (C) 1994 American Institute of Physics.

引用

页码：2437 / 2438

页数：2

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