Microstructural characterization of inlaid copper interconnect lines

被引:67
作者
Besser, PR [1 ]
Zschech, E
Blum, W
Winter, D
Ortega, R
Rose, S
Herrick, M
Gall, M
Thrasher, S
Tiner, M
Baker, B
Braeckelmann, G
Zhao, L
Simpson, C
Capasso, C
Kawasaki, H
Weitzman, E
机构
[1] Adv Micro Devices Inc, Technol Dev Grp, Austin, TX USA
[2] Saxony Mfg GmbH, Adv Micro Devices, Dresden, Germany
[3] Rigaku Corp, AMIA Labs, The Woodlands, TX USA
[4] Motorola Inc, DigitalDNA Lab, Austin, TX USA
关键词
copper; microstructure; grain size; stress; texture; interconnects;
D O I
10.1007/s11664-001-0038-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The microstructure of inlaid Cu lines has been quantified as a function of annealing conditions, post-plating, and post-CMP. The grain size distribution was measured using the median intercept method, crystallographic texture was characterized by pole figure analysis, and mechanical stress was determined using x-ray diffraction. The median grain size and mechanical stress level increase with increasing anneal temperature. The crystallographic texture is independent of the anneal temperature and is predominantly(111) with a small fraction of sidewall-nucleated (111) grains. The (111) grains nucleated from the trench bottom have a preferred in-plane orientation. The grain growth in the trench is independent of that in the overburden.
引用
收藏
页码:320 / 330
页数:11
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