Growth mechanism of TiN film on dielectric films and the effects on the work function

被引：32

作者：

Choi, K

Lysaght, P

Alshareef, H

Huffman, C

Wen, HC

Harris, R

Luan, H

Hung, PY

Sparks, C

Cruz, M

Matthews, K

Majhi, P

Lee, BH

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] Texas Instruments Inc, Austin, TX 78741 USA

[3] AMD, Austin, TX 78741 USA

[4] Infineon, Austin, TX 78741 USA

[5] Philips, Austin, TX 78741 USA

[6] IBM Corp, Austin, TX 78741 USA

来源：

THIN SOLID FILMS | 2005年 / 486卷 / 1-2期

关键词：

MOSFET; metal gate electrode; high-k gate dielectric; TiN; atomic layer deposition; work function;

D O I：

10.1016/j.tsf.2004.11.239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the growth mechanism of ALD-TiN film on different dielectrics and the resulting effective work function value. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. TiN growth mechanism changed from 3-D type on SiO2, to layer-by-layer type on HfO2,. The minimum TiN thickness required for a complete surface coverage varies according to the growth mechanism. Capacitor (MOSCAP) characterization revealed that the effective work function of TiN is dependent not only on dielectric films but also on the TiN thickness. The behavior of work function and fixed charge correlated with the growth mechanism of TiN on dielectric films. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：141 / 144

页数：4

共 12 条

[1]

CHOI K, 2004, WOE11 C

[2]

Datta S, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P653

[3]

GEORGE B, 2004, IEEE SISC C

[4] Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing [J].