Near room-temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror

被引：10

作者：

Rapp, S

Salomonsson, F

Bentell, J

Sagnes, I

Moussa, H

Mériadec, C

Raj, R

Streubel, K

Hammar, M

机构：

[1] Royal Inst Technol, Lab Semiconductor Mat, Dept Elect, S-16440 Kista, Sweden

[2] CNET, DTD, CDP, France Telecom, F-92225 Bagneux, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 01期

关键词：

D O I：

10.1049/el:19990014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 mu m diameter device, the threshold current is 6mA and the input threshold power is 21 mW. The maximum operating temperature is 17 and 101 degrees C for CW and pulsed conditions, respectively.

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页码：49 / 50

页数：2

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