RT pulsed operation of metamorphic VCSEL at 1.55μm

被引：13

作者：

Boucart, J ^{[1
]}

Starck, C ^{[1
]}

Plais, A ^{[1
]}

Derouin, E ^{[1
]}

Fortin, C ^{[1
]}

Gaborit, F ^{[1
]}

Pinquier, A ^{[1
]}

Goldstein, L ^{[1
]}

Carpentier, D ^{[1
]}

Jacquet, J ^{[1
]}

机构：

[1] Alcatel Corp Res Ctr, OPTO & Groupement Internet Econ, F-91460 Marcoussis, France

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 22期

关键词：

D O I：

10.1049/el:19981508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An all molecular beam epitaxy grown 1.55 mu m vertical cavity surface-emitting laser is presented which comprises an InP/InGaAsP bottom mirror, multiple quantum well active layer and a GaAlAs/GaAs metamorphic top mirror directly grown on the InP cavity. This structure takes advantage of the intrinsic optical, electrical and thermal properties of GaAlAs/GaAs material and is compatible with a 2 in process. Such an approach will therefore lead to a drastic reduction in the cost of optical sources and offer the possibility of a massive development of the optical network.

引用

页码：2133 / 2135

页数：3

共 9 条

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