SiGe δ-channel field-effect transistors on SIMOX substrates

The experimental realization of a strained-SiGe p-type field-effect transistor (delta FET), utilizing a delta-doped layer as the conducting channel, grown on a silicon-on-insulator (SOI) substrate, is fabricated and investigated. The proposed structure exhibits not only higher hole mobility but also higher breakdown voltage with reduced leakage current than those of the same structure fabricated on bulk-Si. High device linearity is still sustained and is attributed to good carrier confinement by not only the V-shaped potential well formed by the heavy delta-doping but also the reduced valence-band bending at the Si buffer by using SOI.