Quantum confinement and carrier localization effects in ZnO/MgxZn1-xO wells synthesized by pulsed laser deposition

被引：9

作者：

Bowen, W. E. ^{[1
]}

Wang, W. ^{[1
]}

Cagin, E. ^{[1
]}

Phillips, J. D. ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect & Comp Engn, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期

关键词：

Zinc oxide; quantum well; pulsed laser deposition; photoluminescence;

D O I：

10.1007/s11664-007-0299-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical properties of ZnO/Mg (x) Zn1-x O (x = 0.17) quantum wells (QWs) grown on c-plane sapphire substrates by pulsed laser deposition are presented. A blueshift in the low-temperature photoluminescence (PL) of the QWs illustrates quantum confinement effects as a function of ZnO well widths in the range from 3 nm to 10 nm. Enhanced luminescence properties are observed with increasing quantum confinement. PL data indicate weak polarization effects associated with the heterojunctions. Temperature-dependent PL measurements indicate carrier/exciton localization with activation energy of approximately 4-5 meV, which are attributed to potential fluctuations at the well-barrier interface.

引用

页码：749 / 754

页数：6

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